An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
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چکیده
منابع مشابه
Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOX Dielectric Stacks: A Correlation study of STM induced BD with C-AFM and TEM
The study of scanning tunneling microscopy (STM) induced localized dielectric degradation and polarity dependent breakdown (BD) in HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy (C-AFM). The ...
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عنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015